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1

[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - 8Gb MLC (Multi-Level Cell) NAND flash memory using 63nm process technology

Jong-Ho Park,, Sung-Hoi Hur,, Joun-Hee Lee,, Jin-Taek Park,, Sel, J.-S., Jong-Won Kim,, Sang-Bin Song,, Jung-Young Lee,, Ji-Hwon Lee,, Suk-Joon Son,, Yong-Seok Kim,, Min-Cheol Park,, Sooin

Année:

2004

Langue:

english

Fichier:

PDF, 262 KB

english, 2004

2

Charge-trapping device structure of SiO[sub 2]∕SiN∕high-k dielectric Al[sub 2]O[sub 3] for high-density flash memory

Lee, Chang-Hyun, Hur, Sung-Hoi, Shin, You-Cheol, Choi, Jeong-Hyuk, Park, Dong-Gun, Kim, Kinam

Journal:

Applied Physics Letters

Année:

2005

Langue:

english

Fichier:

PDF, 399 KB

english, 2005

3

A physical-based analytical turn-on model of polysilicon thin-film transistors for circuit simulation

Gi-Young Yang, Sung-Hoi Hur, Chul-Hi Han

Journal:

IEEE Transactions on Electron Devices

Année:

1999

Langue:

english

Fichier:

PDF, 320 KB

english, 1999

4

A poly-Si thin-film transistor EEPROM cell with a folded floating gate

Sung-Hoi Hur, Nae-In Lee, Jin-Woo Lee, Chul-Hi Han

Journal:

IEEE Transactions on Electron Devices

Année:

1999

Langue:

english

Fichier:

PDF, 96 KB

english, 1999

5

Highly reliable polysilicon oxide grown by electron cyclotron resonance nitrous oxide plasma

Nae-In Lee,, Jin-Woo Lee,, Sung-Hoi Hur,, Hyoung-Sub Kim,, Chul-Hi Han,

Journal:

IEEE Electron Device Letters

Année:

1997

Langue:

english

Fichier:

PDF, 69 KB

english, 1997

6

[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - A highly manufacturable low-k ALD-SiBN process for 60nm NAND flash devices and beyond

Jin-Gyun Kim,, Jae-Young Ahn,, Hong-Suk Kim,, Ju-Wan Lim,, Chae-Ho Kim,, Hoka Shu,, Hasebe, K., Sung-Hoi Hur,, Jong-Ho Park,, Hee-Seok Kim,, Yu-Gyun Shin,, U-In Chung,, Joo-Tae Moon,

Année:

2004

Langue:

english

Fichier:

PDF, 261 KB

english, 2004

7

Flash Cell Arrays

Park, Mincheol, Lee, Chang-Sub, Hur, Sung-Hoi, Kim, Keonsoo, Lee, Won-Seong

Journal:

IEEE Electron Device Letters

Année:

2008

Langue:

english

Fichier:

PDF, 424 KB

english, 2008

8

[IEEE 2005 IEEE VLSI-TSA. International Symposium on VLSI Technology (VLSI-TSA-TECH) - Hsinchu, Taiwan (25-27 April 2005)] IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech). - Effect of low-K dielectric material on 63nm MLC (multi-level cell) NAND flash cell arrays

Mincheol Park,, Jung-Dal Choi,, Sung-Hoi Hur,, Jong-Ho Park,, Joon-Hee Lee,, Jin-Taek Park,, Sel, J.-S., Jong-Won Kim,, Sang-Bin Song,, Jung-Young Lee,, Ji-Hwon Lee,, Suk-Joon Son,, Yong-Se

Année:

2005

Langue:

english

Fichier:

PDF, 322 KB

english, 2005

9

Effects of floating-gate interference on NAND flash memory cell operation

Jae-Duk Lee,, Sung-Hoi Hur,, Jung-Dal Choi,

Journal:

IEEE Electron Device Letters

Année:

2002

Langue:

english

Fichier:

PDF, 206 KB

english, 2002

10

[IEEE International Electron Devices Meeting. IEDM Technical Digest - Washington, DC, USA (7-10 Dec. 1997)] International Electron Devices Meeting. IEDM Technical Digest - Suppressed short-channel effects and improved stability in polysilicon thin film transistors with very thin ECR N/sub 2/O-plasma gate oxide

Jin-Woo Lee,, Nae-In Lee,, Sung-Hoi Hur,, Chul-Hi Han,

Année:

1997

Langue:

english

Fichier:

PDF, 447 KB

english, 1997

11

[IEEE International Electron Devices Meeting. Technical Digest - Washington, DC, USA (2-5 Dec. 2001)] International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) - Highly manufacturable 1 Gb NAND flash using 0.12 μm process technology

Jung-Dal Choi,, Seong-Soon Cho,, Yong-Sik Yim,, Jae-Duk Lee,, Hong-Soo Kim,, Kyung-Joong Joo,, Sung-Hoi Hur,, Heung-Soo Im,, Joon Kim,, Jeong-Woo Lee,, Kang-Ill Seo,, Man-Sug Kang,, Kyung-

Année:

2001

Langue:

english

Fichier:

PDF, 432 KB

english, 2001

12

[IEEE 2004 IEEE International Solid-State Circuits Conference - San Francisco, CA, USA (15-19 Feb. 2004)] 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519) - A 3.3 V 4 Gb four-level NAND flash memory with 90 nm CMOS technology

Seungjae Lee,, Young-Taek Lee,, Wook-Kee Han,, Dong-Hwan Kim,, Moo-Sung Kim,, Seung-Hyun Moon,, Hyun Chul Cho,, Jung-Woo Lee,, Dae-Seok Byeon,, Young-Ho Lim,, Hyung-Suk Kim,, Sung-Hoi Hur,

Année:

2004

Langue:

english

Fichier:

PDF, 854 KB

english, 2004

13

[IEEE International Electron Devices Meeting - Washington, DC, USA (10-13 Dec. 1995)] Proceedings of International Electron Devices Meeting - Hydrogen passivation effects on performance of visible thin-film light-emitting diodes (TFLEDs)

Jong-Wook Lee,, Sung-Hoi Hur,, Koeng Su Lim,

Année:

1995

Langue:

english

Fichier:

PDF, 312 KB

english, 1995

14

[IEEE International Electron Devices Meeting - Washington, DC, USA (10-13 Dec. 1995)] Proceedings of International Electron Devices Meeting - A physical-based analytical turn-on model of polysilicon thin film transistors for circuit simulation

Gi-Young Yang,, Sung-Hoi Hur,, Choong-Ki Kim,, Chul-Hi Han,

Année:

1995

Langue:

english

Fichier:

PDF, 277 KB

english, 1995

15

[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - A 2 Gb NAND flash memory with 0.044 μm/sup 2/ cell size using 90 nm flash technology

Dong-Chan Kim,, Wang-Chul Shin,, Jae-Duk Lee,, Jin-Hyun Shin,, Joon-Hee Lee,, Sung-Hoi Hur,, Ihn-Gee Baik,, Yoo-Choel Shin,, Chang-Hyun Lee,, Jae-Sun Yoon,, Heon-Guk Lee,, Kwon-Soon Jo,, S

Année:

2002

Langue:

english

Fichier:

PDF, 321 KB

english, 2002

16

[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - 70nm NAND flash technology with 0.025 μm/sup 2/ cell size for 4Gb flash memory

Yong-Sik Yim,, Kwang-Shik Shin,, Sung-Hoi Hur,, Jae-Duk Lee,, Ihn-Gee Balk,, Hong-Soo Kim,, Soo-Jin Chai,, Eun-Young Choi,, Min-Cheol Park,, Dong-Seok Eun,, Sung-Bok Lee,, Hye-Jin Lim,, Su

Année:

2003

Langue:

english

Fichier:

PDF, 268 KB

english, 2003

17

Suppression of Leakage Current in n-Channel Polysilicon Thin-Film Transistors Using N H 3 Annealing

Choi, Deuk-Sung, Hur, Sung-Hoi, Yang, Gi-Young, Han, Chul-Hi, Kim, Choong-Ki

Journal:

Japanese Journal of Applied Physics

Année:

1995

Langue:

english

Fichier:

PDF, 308 KB

english, 1995

18

Nonvolatile SRAM cell using different capacitance loading

Hur, Sung-Hoi, Han, Chul-Hi

Journal:

Electronics Letters

Année:

1998

Langue:

english

Fichier:

PDF, 195 KB

english, 1998

19

Effect of Bottom Polysilicon Doping on the Reliability of Interpoly Oxide Grown Using Electron Cyclotron Resonance N 2 O-Plasma

Lee, Nae-In, Lee, Jin-Woo, Hur, Sung-Hoi, Kim, Hyoung-Sub, Han, Chul-Hi

Journal:

Japanese Journal of Applied Physics

Année:

1998

Langue:

english

Fichier:

PDF, 384 KB

english, 1998

20

A Model for the Frequency Dependence of Charge Pumping Current in Polycrystalline Silicon Thin Film Transistor

Lee, Ga-Won, Lee, Jung-Yeal, Choi, Deuk-Sung, Hur, Sung-Hoi, Kim, Choong-Ki, Han, Chul-Hi

Journal:

MRS Proceedings

Année:

1995

Langue:

english

Fichier:

PDF, 336 KB

english, 1995

21

Effects of ECR N2O-Plasma Nitridation on Thermal Oxide Characteristics

Lee, Jin-Woo, Lee, Jung-Yeal, Choi, Deuk-Sung, Hur, Sung-Hoi, Kim, Choong-Ki, Han, Chul-Hi

Journal:

MRS Proceedings

Année:

1995

Langue:

english

Fichier:

PDF, 352 KB

english, 1995